One　of　the　major　bottlenecks　in　the　commercialization　of　micro-light-emitting　diodes　(micro-LEDs)　displays　is　the　＇massive　transfer＇.　Monolithic　integration　of　the　driving　element　and　the　micro-LED　pixel　can　radically　avoid　the　technical　problem　of　massive　transfer.　In　this　paper,　the　integrated　device　was　fabricated　on　a　gallium　nitride　(GaN)　substrate.　The　device　uses　graphene　as　the　channel　material　for　the　driving　field-effect　transistors　(FETs)　to　control　the　micro-LEDs.　However,　in　the　traditional　process,　the　residue　of　the　ultraviolet　photoresist　on　the　surface　of　the　graphene　will　cause　severe　doping,　which　resulting　in　the　inferior　performance　of　the　fabricated　graphene　FETs　(GFETs)　device.　To　get　higher-performance　integrated　devices,　a　new　process　method　was　intended　in　this　paper.　The　performance　of　the　GFETs　was　enhanced　by　optimizing　the　fabrication　process,　and　the　current　control　range　of　the　GFETs　for　micro-LED　was　up　to　11mA.　The　new　process　method　adopts　the　PMMA　thin　film　underlayer　photolithography　method,　which　effectively　avoids　the　severe　doping　problem　caused　by　ultraviolet　photoresist　residues　on　the　graphene　surface　when　fabricating　GFETs　for　integrated　devices.　Based　on　the　new　fabricating　technology,　the　transconductance　and　carrier　mobility　of　GFETs　had　significantly　enhanced.　In　conclusion,　this　research　further　expands　the　application　of　two-dimensional　materials　in　the　field　of　optoelectronic　displays.　Furthermore,　the　application　of　the　new　fabrication　process　of　the　integrated　devices　can　be　used　as　a　technology　accumulation　to　promote　the　commercialization　of　micro-LEDs.　©　2021　SPIE