The　fatigue　effect　of　the　HfZrO2　thin　film　sample　plays　a　vital　role　in　its　application　in　the　semiconductor　field.　This　article　explores　the　fatigue　mechanism　inside　the　thin　film　sample　by　studying　the　effect　of　various　experimental　conditions　on　the　ferroelectric　properties　of　the　sample,　and　analyzes　the　experimental　results.　Then　we　study　the　experimental　results　to　clarify　the　changes　in　the　micro-physical　mechanism　inside　the　sample.Combined　with　macro-theory　and　micro-examination,　we　observe　that　experimental　conditions　such　as　the　pulse　width　of　the　applied　pulse　will　affect　the　change　of　the　sample＇s　remnant　polarization　values　during　the　fatigue　cycle.　Finally,　we　try　to　optimize　these　conditions　to　achieve　stable　remanent　polarization.　This　paper　further　clarifies　the　fatigue　mechanism　of　the　sample　through　the　mathematical　analysis　of　experimental　data　and　the　comparison　of　existing　theories,　and　points　out　the　direction　for　optimizing　the　application　of　the　device.　©　Published　under　licence　by　IOP　Publishing　Ltd.