The　appearance　of　ferroelectric　(FE)　and　anti-ferroelectric　(AFE)　properties　in　HfO2-based　thin　films　is　highly　intriguing　in　terms　of　both　the　scientific　context　and　practical　application　in　various　electronic　and　energy-related　devices.　Interestingly,　these　materials　showed　a　＇wake-up　effect＇,　which　refers　to　the　increase　in　remanent　polarization　with　increasing　electric　field　cycling　number　before　the　occurrence　of　the　fatigue　effect.　The　appearance　of　ferroelectric　(FE)　and　anti-ferroelectric　(AFE)　properties　in　HfO2-based　thin　films　is　highly　intriguing　in　terms　of　both　the　scientific　context　and　practical　application　in　various　electronic　and　energy.　In　this　paper,　we　have　conducted　an　in-depth　study　on　the　relationship　between　the　Wake-up　effect　in　HfO2-based　films　and　oxygen　vacancies.　©　Published　under　licence　by　IOP　Publishing　Ltd.