PP　IGBT　is　a　new　type　of　electronic　device,　which　has　different　characteristics,　such　as　compact　structure,　double-sided　heat　dissipation,　and　large　scale　parallel　chip　can　be　realized　in　a　single　device.　It　is　widely　used　in　power　system　engineering　applications　such　as　flexible　direct　current　transmission,　flexible　alternating　current　transmission,　and　photovoltaic　access.　PP　IGBT　are　generally　used　in　series　applications　requiring　external　pressure　to　maintain　electrical　and　mechanical　connections　between　the　internal　components.　For　PP　IGBT,　thermal　resistance　is　an　important　indicator　related　to　its　thermal　characteristics.　The　thermal　resistance　of　PP　IGBT　includes　not　only　the　thermal　resistance　of　the　material　of　each　component,　but　also　the　thermal　contact　resistance.　A　plurality　of　contact　surfaces　is　formed　between　each　material　layer　inside　the　device　to　form　a　thermal　contact　resistance.　Insufficient　contact　surface　will　increase　the　thermal　contact　resistance,　resulting　in　high　temperature　or　uneven　temperature　distribution.　Therefore,　the　thermal　contact　resistance　will　have　an　important　effect　on　its　performance.　In　this　paper,　through　the　establishment　of　single　die　PP-IGBT　module　three-dimensional　finite　element　model,　thermal-electrical-structural　coupling　analysis　was　carried　out　on　PP　IGBT.　Calculate　and　compare　the　values　of　the　thermal　contact　resistance　of　the　devices　before　and　after　250000　power　cycles　experiment.　The　effect　of　the　contact　surface　morphology　on　the　thermal　contact　resistance　is　mainly　studied.　Furthermore,　the　effect　of　the　thermal　contact　resistance　of　all　material　layers　on　the　overall　thermal　resistance　of　the　PP-IGBT　is　obtained.　©　2021　IEEE.