IGBT　as　the　core　device　of　power　conversion　and　control　is　widely　applied　in　advanced　manufacturing,　national　defense　industry　and　other　fields　required　electric　energy.　Studies　show　that　inhomogeneous　distribution　of　temperature　caused　by　chip　is　a　major　factor　resulted　in　failure　of　electronic　devices.　BEM　is　a　commonly　used　method　for　the　analysis　of　heat　conduction　problems.　In　recent　years,　IGABEM　which　provides　some　key　advancements　is　a　new　development　of　BEM.　Based　on　the　IGABEM,　a　method　for　the　heat　conduction　of　IGBT　devices　is　proposed.　The　reliability　of　the　algorithm　is　examined　by　the　consistency　of　numerical　and　analytical　solutions.　©　2020　IEEE.