Simulation Analysis of Mechanical Response of Wire Bonding in SiP under Thermal-mechanical-electrical Coupling Load - Details

Author：

Chen, Fangzhou (Chen, Fangzhou.) | Chen, Si (Chen, Si.) | Zhou, Bin (Zhou, Bin.) | Huang, Yun (Huang, Yun.) | Qin, Fei (Qin, Fei.)

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EI Scopus

Abstract：

The　heat　dissipation　of　chips　rise　the　risk　for　reliability　of　the　system　in　package　(SiP).　Sequential　coupling　FEM　simulation　method　was　adopted　to　evaluate　the　reliability　of　SiP.　The　sub-model　technology　was　used　to　analyze　the　thermo-mechanical　response　of　gold　wire　leads　in　the　whole　SiP　device.　Based　on　the　simulation,　the　stress　and　temperature　distribution　of　the　lead　wires　are　obtained.　The　maximum　value　is　compared　with　the　ultimate　strength　to　evaluate　the　reliability　of　the　product　under　working　conditions.　©　2020　IEEE.

Keyword：

System-in-package Finite element method Silicon compounds Wire Reliability analysis

Author Community：

[ 1 ] [Chen, Fangzhou]Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, Guangzhou, China
[ 2 ] [Chen, Si]Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, Guangzhou, China
[ 3 ] [Zhou, Bin]Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, Guangzhou, China
[ 4 ] [Huang, Yun]Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, Guangzhou, China
[ 5 ] [Qin, Fei]Beijing University of Technology, Beijing, China

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Source ：

Year： 2020

Page： 106-107

Language： English

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count： 1

ESI Highly Cited Papers on the List： 0 Unfold All

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Chinese Cited Count：

30 Days PV： 5

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