Abstract：
Flexible light-emitting diodes (LEDs) are highly desired for wearable devices,flexible displays,robotics,biomedicine,etc.Traditionally,the transfer process of an ultrathin wafer of about 10-30μm to a flexible substrate is utilized.However,the yield is low,and it is not applicable to thick GaN LED chips with a 100 μm sapphire substrate.In this paper,transferable LED chips utilized the mature LED manufacture technique are developed,which possesses the advantage of high yield.The flexible LED array demonstrates good electrical and optical performance.
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半导体学报（英文版）
ISSN： 1674-4926
Year： 2020
Issue： 3
Volume： 41
Page： 39-41
Cited Count：
SCOPUS Cited Count：
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count： -1
Chinese Cited Count：
30 Days PV： 3
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