Device-quality　ITO　films　used　for　silicon　heterojunction　(SHJ)　solar　cells　prepared　by　DC　magnet　sputter　at　room　temperature　was　investigated　in　the　following　aspects,　the　effect　of　annealing　temperature　on　the　optical,　electrical　and　crystalline　properties　of　the　ITO　films,　and　the　influence　of　amorphous　and　micro-crystal　ITO　film　on　SHJ　solar　cell　performance　with　a　series　of　experiments.　The　results　show　that　the　amorphous　ITO　films　have　superior　transmittance　and　mobility.　However,　the　optical　and　electrical　properties　degrade　due　to　enhancing　the　film　crystallinity　when　annealed　above　190℃.　By　optimizing　the　annealing　temperature,　the　ITO＇s　resistivity　of　4.83×10-4　Ω•cm　and　mobility　as　high　as　35.3　cm2/(V•s)are　obtained,　and　the　transmittance　exceeds　90%.　Compared　with　SHJ　cells　using　microcrystalline　ITO　film,　the　short-circuit　current　is　gained　by　0.32　mA/cm2　on　SHJ　cells　using　amorphous　ITO　film,　and　conversion　efficiency　is　increased　as　well.　©　2020,　Editorial　Board　of　Acta　Energiae　Solaris　Sinica.　All　right　reserved.