With　the　rapid　development　of　photovoltaic　industry,　the　quality　requirement　of　silicon　single　crystal　is　increasing.　Czochralski　is　the　main　method　to　produce　single　crystal　silicon.　The　production　scale　of　single　crystal　silicon　can　be　enlarged　by　increasing　the　height　of　the　sub-chamber　in　the　single　crystal　furnace.　Due　to　the　large　increase　in　the　height　of　the　sub-chamber　and　the　distance　between　the　centroid　of　the　single　crystal　furnace　lifting　head　and　the　rotating　axis　of　the　single　crystal　furnace,　the　overall　stability　of　the　single　crystal　furnace　is　greatly　affected　and　the　production　quality　of　the　single　crystal　silicon　is　reduced.　In　order　to　solve　this　problem,　a　reliable　mechanical　analysis　model　of　single　crystal　furnace　was　established,　and　the　dynamic　response　of　the　whole　single　crystal　furnace　was　analyzed　by　numerical　simulation　method.　The　law　of　motion　and　the　maximum　swing　amplitude　of　the　bottom　end　of　tungsten　wire　rope　were　calculated　when　the　height　of　the　sub-chamber　was　increased,　which　provides　a　basis　for　improving　the　design.　The　numerical　simulation　analysis　shows　that　the　large　eccentricity　of　the　lifting　head　is　the　main　reason　for　the　shaking　of　the　single　crystal　furnace　lifting　system.　For　this　reason,　it　is　proposed　to　add　a　centroid　adjustment　device　to　the　lifting　head,　and　the　control　system　is　adjusted　to　ensure　that　the　mass　center　of　the　lifting　head　is　on　the　rotation　axis　to　reduce　the　swing　of　the　lifting　system.　©　2021,　Journal　of　Synthetic　Crystals　Press.　All　right　reserved.