Gate-Controlled Schottky Heterojunctions Photodetector Based on Graphene-Silicon-Graphene - Details

Author：

Indexed by：

Scopus

Abstract：

We　report　a　graphene-silicon-graphene-based　photodetector　with　two　opposite　Schottky　heterojunctions.　Through　the　tuning　of　gate　voltage,　the　device　can　obtain　high　photoconductivity　gain　and　achieve　excellent　optical　detection　performance.　　©　2021　OSA.

Keyword：

Author Community：

[ 1 ] [Qian F.]Beijing University of Technology, Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing, 100124, China
[ 2 ] [Hu L.]Beijing University of Technology, Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing, 100124, China
[ 3 ] [Wang Q.]Beijing University of Technology, Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing, 100124, China
[ 4 ] [Sun J.]Fuzhou University, National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou, 350116, China
[ 5 ] [Xie Y.]Beijing University of Technology, Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing, 100124, China
[ 6 ] [Xu C.]Beijing University of Technology, Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing, 100124, China

Reprint Author's Address：

Email：

Show more details

Related Keywords：

Source ：

Year： 2021

Language： English

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 2

Affiliated Colleges：

Get Fulltext

Library Discovery Baidu Scholar Search SCOPUS

Type
Departments

All Years Choose Year From to