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Author:

Qin, L. (Qin, L..) | Liu, J. (Liu, J..) | Wang, L. (Wang, L..) | Wang, K. (Wang, K..) | Zhou, B. (Zhou, B..) | Wang, Y. (Wang, Y..) | Sun, H. (Sun, H..) | Niu, C. (Niu, C..) | Wang, Q. (Wang, Q..)

Indexed by:

EI Scopus SCIE

Abstract:

For extremely high field magnets, the LTS/HTS structure is an efficient and economical solution. In an LTS/HTS magnet system, the LTS (Low-temperature superconducting) background field magnet is deeply mutual inductance coupled with the HTS (High-temperature superconducting) insert magnet. A sudden background LTS magnet quench may potentially destroy the double pancakes (DPs) of the insert HTS magnet because of the induced current and the resulting additional electromagnetic stress. To improve the safety and stability of the LTS/HTS magnet system, this article proposed a new passive protecting scheme of the LTS/HTS system. In this scheme, a magnetic dam is arranged between the insert magnet and the background field magnet. When the background field magnet quenches, the magnetic dam can help to slow down the magnetic flux variation in the insert magnet. According to the simulation results, a magnetic dam can significantly reduce the instantaneous stress rise of the insert magnet by 65.3protective effect of the magnetic dam was also verified by the experiments with a Bi-2223 insulating coil magnet. The structural parameters affecting the isolating effect of the magnetic dam were also discussed. Based on these work, researchers can further improve the safety and stability of the LTS/HTS magnet system. IEEE

Keyword:

REBCO insert magnet Superconducting magnets Dams Integrated circuit modeling magnetic dam quench protection Magnetic circuits Stress High-temperature superconductors Magnetomechanical effects

Author Community:

  • [ 1 ] [Qin L.]Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, 100190, China and University of Chinese Academy of Sciences, Beijing, 100049, China.
  • [ 2 ] [Liu J.]Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, 100190, China.
  • [ 3 ] [Wang L.]Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, 100190, China.
  • [ 4 ] [Wang K.]Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, 100190, China and University of Chinese Academy of Sciences, Beijing, 100049, China.
  • [ 5 ] [Zhou B.]Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, 100190, China and University of Chinese Academy of Sciences, Beijing, 100049, China.
  • [ 6 ] [Wang Y.]Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, 100190, China.
  • [ 7 ] [Sun H.]Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, 100190, China and University of Chinese Academy of Sciences, Beijing, 100049, China.
  • [ 8 ] [Niu C.]College of Information and Communication Engineering, Faculty of Information Technology, Beijing University of Technology, Beijing, 1000124, China.
  • [ 9 ] [Wang Q.]Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, 100190, China.

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Source :

IEEE Transactions on Magnetics

ISSN: 0018-9464

Year: 2021

Issue: 2

Volume: 60

Page: 1-6

2 . 1 0 0

JCR@2022

ESI Discipline: PHYSICS;

ESI HC Threshold:72

JCR Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 5

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