Bi3+,　Yb3+　co-doped　Y2O3　down-conversion　film　has　been　prepared　by　the　pulse　laser　deposition　technique　on　Si(100)　substrate　with　the　way　of　metal-assisted　wet　etching.　The　average　reflectance　of　the　film　has　a　minimum　value　of　5.28%　in　the　visible　region　from　300　to　800　nm.　Under　311　nm　excitation,　the　film　can　emit　980　nm　light　which　is　in　the　best　response　range　to　crystalline　silicon　solar　cells.　Compared　to　the　film　without　anti-reflection　structure　that　we　have　done　before,　the　film　with　anti-reflection　structure　has　the　higher　PL　intensity.　With　the　increasing　of　the　etching　time,　the　emission　intensities　of　Bi3+　and　Yb3+　increase　monotonically.　The　enhancing　light　conversion　performance　by　using　anti-reflection　structure　will　provide　a　simple　method　to　the　light　conversion　films　which　can　be　used　in　enhancement　of　energy　efficiency　for　crystalline　Si　solar　cells.　©,　2014,　Chines　Academy　of　Sciences.　All　right　reserved.