Focused　ion　beam　(FIB)　has　been　adopted　extensively　for　transmission　electron　microscope　(TEM)　sample　preparation　during　the　past　decades.　However,　ion　beam-　and　deposition-induced　damage　during　transferring　and　mounting　of　the　sample　cannot　be　effectively　avoided,　limiting　the　application　of　FIB　in　ion-beam　illumination-sensitive　samples.　A　transferring　device　called　the　FIB　shield　is　designed　and　fabricated　to　greatly　reduce　the　damage　and　contamination　of　the　sample　during　transfer　and　mounting　under　Ga+　beam　imaging,　milling　and　Pt　deposition.　Nearly　damage-free　transfer　and　precise　positioning　and　attachment　of　beam-sensitive　in　situ　TEM　nanoindentation　samples　are　achieved.　The　effectiveness　of　the　shielding　plate　to　block　Ga+　radiation　damage　during　Ga+　beam　imaging　and　milling　and　that　of　the　buffer　region　to　alleviate　sputtering　damage　during　Pt　deposition　are　verified　by　corresponding　experiments.