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Author:

Cui, Dingkang (Cui, Dingkang.) | Wang, Zhihai (Wang, Zhihai.) (Scholars:王志海) | Jiang, Mengqian (Jiang, Mengqian.) | Chen, Zhijie (Chen, Zhijie.)

Indexed by:

Scopus SCIE

Abstract:

The noise-shaping (NS) successive approximation register (SAR) analog-to-digital converter (ADC) is an innovative hybrid structure that offers performance advantages. The NS-SAR ADC leverages the SAR ADC as its foundation and combines oversampling technology and noise-shaping technology found in Sigma-Delta ADC. This integration effectively combines the strengths of both structures and enhances overall performance. The ADC features a simple circuit structure, compact chip area, and high energy efficiency, which has positioned it as a prominent research area. In this paper, leveraging the TSMC 65 nm GP process, the NS-SAR ADC is designed with a power supply voltage of 1 V. This design adopts an 8-bit differential capacitor structure, operates at a sampling frequency of 16 MS/s, and achieves an oversampling rate of 16 times the desired performance indicators. Through extensive circuit post simulation verification, the SNR obtained reaches 78 dB, providing an effective bit resolution of 12.7 bits. The core chip area of the ADC measures 366 x 333 mu m2, while the power consumption is impressively low at 417 mu W and FoMs is 168 dB.

Keyword:

noise shaping oversampling successive approximation type analog-to-digital converters

Author Community:

  • [ 1 ] [Cui, Dingkang]Beijing Univ Technol, Fac Informat Technol, Coll Microelect, Beijing 100124, Peoples R China
  • [ 2 ] [Wang, Zhihai]Beijing Univ Technol, Fac Informat Technol, Coll Microelect, Beijing 100124, Peoples R China
  • [ 3 ] [Jiang, Mengqian]Beijing Univ Technol, Fac Informat Technol, Coll Microelect, Beijing 100124, Peoples R China
  • [ 4 ] [Chen, Zhijie]Beijing Univ Technol, Fac Informat Technol, Coll Microelect, Beijing 100124, Peoples R China

Reprint Author's Address:

  • [Wang, Zhihai]Beijing Univ Technol, Fac Informat Technol, Coll Microelect, Beijing 100124, Peoples R China;;

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Source :

ELECTRONICS

Year: 2024

Issue: 2

Volume: 13

2 . 9 0 0

JCR@2022

Cited Count:

WoS CC Cited Count: 2

SCOPUS Cited Count: 3

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 6

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