The　anomalous　Hall　effect　(AHE)　is　an　important　transport　signature　revealing　topological　properties　of　magnetic　materials　and　their　spin　textures.　Recently,　MnBi2Te4　has　been　demonstrated　to　be　an　intrinsic　magnetic　topological　insulator.　However,　the　origin　of　its　intriguing　AHE　behaviors　remains　elusive.　Here,　we　demonstrate　the　Berry　curvature-dominated　intrinsic　AHE　in　wafer-scale　MnBi2Te4　films.　By　applying　back-gate　voltages,　we　observe　an　ambipolar　conduction　and　n-p　transition　in　similar　to　7-layer　MnBi2Te4,　where　a　quadratic　relation　between　the　AHE　resistance　and　longitudinal　resistance　suggests　its　intrinsic　AHE　nature.　In　particular,　for　similar　to　3-layer　MnBi2Te4,　the　AHE　sign　can　be　tuned　from　pristine　negative　to　positive.　First-principles　calculations　unveil　that　such　an　AHE　reversal　originated　from　the　competing　Berry　curvature　between　oppositely　polarized　spin-minority-dominated　surface　states　and　spin-majority-dominated　inner　bands.　Our　results　shed　light　on　the　underlying　physical　mechanism　of　the　intrinsic　AHE　and　provide　new　perspectives　for　the　unconventional　sign-tunable　AHE.