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Author:

Ge, C. (Ge, C..) | Li, Y. (Li, Y..) | Song, H. (Song, H..) | Xie, Q. (Xie, Q..) | Zhang, L. (Zhang, L..) | Ma, X. (Ma, X..) | Liu, J. (Liu, J..) | Guo, X. (Guo, X..) | Yan, Y. (Yan, Y..) | Liu, D. (Liu, D..) | Zhang, W. (Zhang, W..) | Liu, S. (Liu, S..) | Liu, Y. (Liu, Y..)

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Scopus SCIE

Abstract:

Perovskite materials and their applications in optoelectronics have attracted intensive attentions in recent years. However, in-depth understanding about their anisotropic behavior in ultrafast carrier dynamics is still lacking. Here we explore the ultrafast dynamical evolution of photo-excited carriers and photoluminescence based on differently-oriented MAPbBr3 wafers. The distinct in-plane polarization of carrier relaxation dynamics of the (100), (110) and (111) wafers and their out-of-plane anisotropy in a picosecond time scale were found by femtosecond time- and polarization-resolved transient transmission measurements, indicating the relaxation process dominated by optical/acoustic phonon interaction is related to photoinduced transient structure rearrangements. Femtosecond laser two-photon fabricated patterns exhibit three orders of magnitude enhancement of emission due to the formation of tentacle-like microstructures. Such a ultrafast dynamic study carried on differently-oriented crystal wafers is believed to provide a deep insight about the photophysical process of perovskites and to be helpful for developing polarization-sensitive and ultrafast-response optoelectronic devices. © 2024, The Author(s).

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  • [ 1 ] [Ge C.]Institute of Laser Engineering, School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 2 ] [Ge C.]State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
  • [ 3 ] [Li Y.]Institute of Laser Engineering, School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 4 ] [Li Y.]Department of Physics and Applied Optics Beijing Area Major Laboratory, Center for Advanced Quantum Studies, Beijing Normal University, Beijing, 100875, China
  • [ 5 ] [Song H.]Institute of Laser Engineering, School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 6 ] [Xie Q.]Institute of Laser Engineering, School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 7 ] [Zhang L.]State Key Laboratory of NBC Protection for Civilian, Beijing, 102205, China
  • [ 8 ] [Ma X.]Institute of Laser Engineering, School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 9 ] [Liu J.]Key Laboratory of Advanced Functional Materials, College of Materials Science and Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 10 ] [Guo X.]Institute of Laser Engineering, School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 11 ] [Yan Y.]Institute of Laser Engineering, School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 12 ] [Liu D.]Key Laboratory of Advanced Functional Materials, College of Materials Science and Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 13 ] [Zhang W.]Department of Physics and Applied Optics Beijing Area Major Laboratory, Center for Advanced Quantum Studies, Beijing Normal University, Beijing, 100875, China
  • [ 14 ] [Liu S.]Institute of Laser Engineering, School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 15 ] [Liu Y.]State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China

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Source :

Nature Communications

ISSN: 2041-1723

Year: 2024

Issue: 1

Volume: 15

1 6 . 6 0 0

JCR@2022

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 11

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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