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Author:

Sun, Z. (Sun, Z..) | Kang, Q. (Kang, Q..) | Li, J. (Li, J..) | Zhou, S. (Zhou, S..) | Fang, L. (Fang, L..) | Xu, X. (Xu, X..) | Wu, S. (Wu, S..) | Zheng, Z. (Zheng, Z..) | Chen, X. (Chen, X..) | Yan, H. (Yan, H..) | Yao, H. (Yao, H..) | Zhang, Y. (Zhang, Y..)

Indexed by:

EI Scopus SCIE

Abstract:

Improving power conversion efficiency (PCE) in photovoltaics has driven innovative approaches in solar cell design and technology. Silicon heterojunction (SHJ) solar cells exhibit advantages in PCE due to their effective passivating contact structures. SHJ–interdigitated back contact (SHJ–IBC) solar cells have the potential to surpass traditional SHJ cells, attributed to their advantage in short-circuit current (JSC). Herein, Silvaco Atlas technology computer-aided design is used to create digital twins of high-efficiency SHJ solar cells with amorphous silicon and nanocrystalline silicon hole selective contact (HSC) layers. Using parameters from digital twins of SHJ solar cells, the practical efficiency limit of SHJ–IBC solar cells is assessed. The results show that SHJ–IBC cells can achieve potential efficiencies of 27.01% with amorphous HSC and 27.38% with nanocrystalline HSC. Further efficiency augmentation to 27.51% can be achieved by narrowing the gap from 80 to 20 μm. This study not only advances comprehension of SHJ–IBC solar cells but also provides insights into optimizing geometrical configurations for improved performance. The utilization of digital twins provides a valuable tool for predicting and evaluating the performance of SHJ–IBC solar cells, contributing substantively to the ongoing development of high-efficiency photovoltaic technology. © 2024 Wiley-VCH GmbH.

Keyword:

efficiency limits digital twins contact resistance interdigitated back contact–silicon heterojunction solar cells silicon heterojunction solar cells

Author Community:

  • [ 1 ] [Sun Z.]Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
  • [ 2 ] [Kang Q.]Department of Information, Beijing University of Technology, Beijing, 100124, China
  • [ 3 ] [Li J.]Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
  • [ 4 ] [Zhou S.]Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
  • [ 5 ] [Fang L.]LONGi Central R&D Institute, LONGi Green Energy Technology Co., Ltd., Xi'an, 713700, China
  • [ 6 ] [Xu X.]LONGi Central R&D Institute, LONGi Green Energy Technology Co., Ltd., Xi'an, 713700, China
  • [ 7 ] [Wu S.]LONGi Central R&D Institute, LONGi Green Energy Technology Co., Ltd., Xi'an, 713700, China
  • [ 8 ] [Zheng Z.]Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
  • [ 9 ] [Chen X.]Department of Information, Beijing University of Technology, Beijing, 100124, China
  • [ 10 ] [Yan H.]Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
  • [ 11 ] [Yao H.]School of Opto-electronic Engineering, Zaozhuang University, Zaozhuang, 277160, China
  • [ 12 ] [Zhang Y.]Department of Information, Beijing University of Technology, Beijing, 100124, China

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Source :

Physica Status Solidi (A) Applications and Materials Science

ISSN: 1862-6300

Year: 2024

Issue: 6

Volume: 221

2 . 0 0 0

JCR@2022

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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