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Author:

Zhang, Hongda (Zhang, Hongda.) | Wan, Peiyuan (Wan, Peiyuan.) | Geng, Jiarong (Geng, Jiarong.) | Liu, Zhaozhe (Liu, Zhaozhe.) | Chen, Zhijie (Chen, Zhijie.) (Scholars:陈志杰)

Indexed by:

Scopus SCIE

Abstract:

The digital low drop-out regulator (LDO) has been used widely in digital circuits for its low supply voltage characteristics. However, as the traditional digital LDOs regulate the output voltage code at a rate of 1 bit per clock cycle, the transient response speed is limited. This paper presents a digital LDO to improve transient response speed with a multi-bit conversion technique. The proposed technology uses a voltage sensor and a time-to-digital converter to convert the output voltage to digital codes. Based on a 65-nm CMOS process, the proposed DLDO reduces the settling time from 147.8 ns to 25.2 ns on average and the response speed is improved by about six times.

Keyword:

embedded power management low drop-out regulator fast response digital control

Author Community:

  • [ 1 ] [Zhang, Hongda]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Wan, Peiyuan]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Geng, Jiarong]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Liu, Zhaozhe]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 5 ] [Chen, Zhijie]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China

Reprint Author's Address:

  • [Wan, Peiyuan]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China

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Source :

ELECTRONICS

Year: 2020

Issue: 1

Volume: 9

2 . 9 0 0

JCR@2022

ESI Discipline: ENGINEERING;

ESI HC Threshold:115

Cited Count:

WoS CC Cited Count: 11

SCOPUS Cited Count: 15

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 8

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