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Author:

Huang, S. (Huang, S..) | Zhu, L. (Zhu, L..) | Dong, G. (Dong, G..) | Liu, Y. (Liu, Y..) | Chen, Y. (Chen, Y..) | Li, J. (Li, J..) | Zhang, X. (Zhang, X..) | Li, R. (Li, R..) | Zhang, G. (Zhang, G..) | Guan, B. (Guan, B..)

Indexed by:

EI Scopus SCIE

Abstract:

Metal halide perovskites are considered as a prospective candidate as optical gain media for stimulated emission, and the advancement of amplified spontaneous emission (ASE) of perovskite materials is gradually becoming the key to realize the commercialization of perovskite lasers. Nonetheless, the ASE of solution-processed polycrystalline perovskite films still experiences a high threshold and poor optical stability due to their high defect density and poor crystalline quality. In this scenario, a noticeably ameliorated ASE performance with decreased threshold and greater photo-stability is demonstrated in solution-processed (FAPbI3)0.85(MAPbBr3)0.15 polycrystalline perovskite films by introducing a neoteric 4′-Aminoacetophenone hydrochloride (APCl) additive with cost-effective fabrication. The ASE threshold of the APCl-embedded perovskite films is prominently curtailed from 12.8 to 5.3 µJ cm−2, with an augmented optical gain, ASE output intensity, and optical durability. The ameliorated ASE performance can be credited to multifunctional effects of the APCl additive in the perovskite films, presenting a low defect density, an unambiguously elevated photoluminescence, a prolonged decay lifetime and thus enabling the easily achieved population inversion caused by the attenuated nonradiative carrier recombination in the optical gain media. These findings provide a significant foundation and pave the way for realizing the electrically excited lasing based on the perovskite materials. © 2024 Wiley-VCH GmbH.

Keyword:

threshold amplified spontaneous emission perovskite films 4′-Aminoacetophenone hydrochloride optical durability

Author Community:

  • [ 1 ] [Huang S.]Key Laboratory of Optoelectronics Technology Ministry of Education, College of Electronic Science and Technology, Beijing University of Technology, Beijing, 100124, China
  • [ 2 ] [Zhu L.]Key Laboratory of Optoelectronics Technology Ministry of Education, College of Electronic Science and Technology, Beijing University of Technology, Beijing, 100124, China
  • [ 3 ] [Dong G.]Key Lab of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China
  • [ 4 ] [Liu Y.]Institute of Information Photonics Technology, Faculty of Science, Beijing University of Technology, Beijing, 100124, China
  • [ 5 ] [Chen Y.]Aerospace Information Research Institute, Chinese Academy of Science, Beijing, 10094, China
  • [ 6 ] [Li J.]Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
  • [ 7 ] [Zhang X.]Institute of Information Photonics Technology, Faculty of Science, Beijing University of Technology, Beijing, 100124, China
  • [ 8 ] [Li R.]Aerospace Information Research Institute, Chinese Academy of Science, Beijing, 10094, China
  • [ 9 ] [Zhang G.]Aerospace Information Research Institute, Chinese Academy of Science, Beijing, 10094, China
  • [ 10 ] [Guan B.]Key Laboratory of Optoelectronics Technology Ministry of Education, College of Electronic Science and Technology, Beijing University of Technology, Beijing, 100124, China

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Source :

Advanced Optical Materials

ISSN: 2195-1071

Year: 2024

Issue: 12

Volume: 12

9 . 0 0 0

JCR@2022

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 6

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