Ga2O3　material　possesses　extensive　application　potential　and　research　value.　Doping　other　elements　into　intrinsic　Ga2O3　is　one　of　the　common　methods　to　enhance　its　performance　and　is　also　a　hot　research　direction　nowadays.　In　this　paper,　Ta　element　was　introduced　into　Ga2O3　material,　and　Ga2O3:Ta　thin　films　with　different　Ta　doping　concentrations　were　fabricated　using　a　dual-target　RF　co-sputtering　system.　The　effects　of　Ta　doping　concentration　on　microstructure,　optical,　and　optoelectronic　properties　of　the　films　were　meticulously　investigated,　and　the　optimal　Ta　doping　concentration　was　determined.　XPS　results　reveal　that　Ta　entered　Ga2O3　lattice　with　a　+5　oxidation　state,　and　combined　with　EDS　results,　it　is　inferred　that　Ta　successfully　partially　substitutes　Ga.　XRD　and　XPS　results　indicate　that　when　the　sputtering　power　of　Ta2O5　is　30　W,　corresponding　to　a　Ta　doping　concentration　of　2.39　at.%,　the　film　exhibits　enhanced　crystallinity.　The　Ga2O3-based　MSM　detector　prepared　under　this　condition　demonstrates　superior　stability　and　detection　sensitivity.　Additionally,　it　also　exhibits　stable　photoresponse　to　365　nm　light.　This　work　promotes　the　application　of　Ga2O3　material　and　provides　new　insights　into　improving　the　stability　and　performance　of　ultraviolet　photodetectors.　©　2024　Elsevier　Ltd