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Author:

Wang, T. (Wang, T..) | Lin, Z. (Lin, Z..) | Zhang, W. (Zhang, W..) | Lei, Y. (Lei, Y..) | Zhao, J. (Zhao, J..)

Indexed by:

EI Scopus SCIE

Abstract:

In this paper, an anti-oxidation film was formed on the surface of Sn3.0Ag0.5Cu solder balls by using a composite system of benzotriazole (BTA) and 2-aminobenzimidazole (2-ABT). The properties of anti-oxidation film were measured by shaking balls test, shearing strength test and cavity test. The results showed that when the combination of 1.5 g/L BTA and 0.5 g/L 2-ABT was used to form an anti-oxidation film on the surface of solder balls, the life of the solder balls surface without dendrite wear during shaking balls test was increased by 10 times, and the cavity rate was decreased from 5 % to 3 %, resulting in that the shear strength of the solder joint was increased from 20.96 MPa to 40.45 MPa. And the theoretical calculation results showed that N2 atoms of benzotriazole and 2-aminobenzimidazole molecules were the most active and adsorbed on the surface of the solder balls to form anti-oxidation films. © 2024

Keyword:

Solder balls Benzotriazole Anti-oxidation film 2-aminobenzimidazole Synergistic effect

Author Community:

  • [ 1 ] [Wang T.]Hebei Key Laboratory of Micro Spacecraft Technology, North China Institute of Aerospace Engineering, Langfang, 065000, China
  • [ 2 ] [Lin Z.]Hebei Key Laboratory of Micro Spacecraft Technology, North China Institute of Aerospace Engineering, Langfang, 065000, China
  • [ 3 ] [Zhang W.]Hebei Key Laboratory of Micro Spacecraft Technology, North China Institute of Aerospace Engineering, Langfang, 065000, China
  • [ 4 ] [Lei Y.]Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
  • [ 5 ] [Zhao J.]Hebei Key Laboratory of Micro Spacecraft Technology, North China Institute of Aerospace Engineering, Langfang, 065000, China

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Source :

Microelectronics Reliability

ISSN: 0026-2714

Year: 2024

Volume: 155

1 . 6 0 0

JCR@2022

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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