Please Login >
English| 简体中文

  • Complex
  • Title
  • Keyword
  • Abstract
  • Scholars
  • Journal
  • ISSN
  • Conference
搜索

Advanced Search

Author：

Sang, L. (Sang, L..) | Jin, R. (Jin, R..) | Cui, J. (Cui, J..) | Niu, X. (Niu, X..) | Li, Z. (Li, Z..) | Yang, J. (Yang, J..) | Nuo, M. (Nuo, M..) | Zhang, M. (Zhang, M..) | Wang, M. (Wang, M..) | Wei, J. (Wei, J..)

Indexed by：

Scopus SCIE

Abstract：

A　SiC　fin-channel　MOSFET　structure　(Fin-MOS)　is　proposed　for　an　enhanced　gate　shielding　effect.　The　gates　are　placed　on　each　side　of　the　narrow　fin-channel　region,　while　grounded　p-shield　regions　below　the　gates　provide　a　strong　shielding　effect.　The　device　is　investigated　using　Sentaurus　TCAD.　For　a　narrow　fin-channel　region,　there　is　difficulty　in　forming　an　Ohmic　contact　to　the　p-base;　a　floating　p-base　might　potentially　store　negative　charges　upon　high　drain　voltage,　and,　thus,　causes　threshold　voltage　instabilities.　The　simulation　reveals　that,　for　a　fin-width　of　0.2　μm,　the　p-shield　regions　provide　a　stringent　shielding　effect　against　high　drain　voltage,　and　the　dynamic　threshold　voltage　shift　(∆Vth)　is　negligible.　Compared　to　conventional　trench　MOSFET　(Trench-MOS)　and　asymmetric　trench　MOSFET　(Asym-MOS),　the　proposed　Fin-MOS　boasts　the　lowest　OFF-state　oxide　field　and　reverse　transfer　capacitance　(Crss),　while　maintaining　a　similar　low　ON-resistance.　©　2024　by　the　authors.

Keyword：

dynamic threshold voltage SiC MOSFET gate shielding effect fin-channel

Author Community：

  • [ 1 ] [Sang L.]Beijing Institute of Smart Energy, Beijing, 102209, China
  • [ 2 ] [Sang L.]Beijing Huairou Laboratory, Beijing, 101409, China
  • [ 3 ] [Jin R.]Beijing Institute of Smart Energy, Beijing, 102209, China
  • [ 4 ] [Jin R.]Beijing Huairou Laboratory, Beijing, 101409, China
  • [ 5 ] [Cui J.]The School of Integrated Circuits, Peking University, Beijing, 100871, China
  • [ 6 ] [Niu X.]Beijing Institute of Smart Energy, Beijing, 102209, China
  • [ 7 ] [Niu X.]Beijing Huairou Laboratory, Beijing, 101409, China
  • [ 8 ] [Li Z.]Beijing Institute of Smart Energy, Beijing, 102209, China
  • [ 9 ] [Li Z.]Beijing Huairou Laboratory, Beijing, 101409, China
  • [ 10 ] [Yang J.]The School of Integrated Circuits, Peking University, Beijing, 100871, China
  • [ 11 ] [Nuo M.]The School of Integrated Circuits, Peking University, Beijing, 100871, China
  • [ 12 ] [Zhang M.]The College of Microelectronics, Beijing University of Technology, Beijing, 100124, China
  • [ 13 ] [Wang M.]The School of Integrated Circuits, Peking University, Beijing, 100871, China
  • [ 14 ] [Wei J.]The School of Integrated Circuits, Peking University, Beijing, 100871, China

Reprint Author's Address：

Email：

Show more details

Related Keywords：

Related Article：

Source ：

Electronics (Switzerland)

ISSN： 2079-9292

Year： 2024

Issue： 9

Volume： 13

2 . 9 0 0

JCR@2022

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count： 1

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 6

Affiliated Colleges：

Get Fulltext

DOI Library Discovery Baidu Scholar Search SCOPUS
Online/Total：503/10578051
Address：BJUT Library(100 Pingleyuan,Chaoyang District,Beijing 100124, China Post Code：100124) Contact Us：010-67392185
Copyright：BJUT Library Technical Support：Beijing Aegean Software Co., Ltd.