In　this　paper,　a　transistor　with　Si　as　the　substrate,　SiO2　as　the　dielectric　layer,　and　Pentacene　as　the　organic　layer,　and　Au　as　the　source-drain　electrode　was　designed　and　prepared,　and　the　dielectric　layer　was　optimized　by　spin-coating　a　layer　of　PMMA.　Subsequently,　the　transistors　pre　and　post　optimization　were　characterized　by　Raman　detection,　white　light　interferometric　detection,　XRD　and　other　characterization　tests,　which　verified　that　the　optimized　Pentacene　film　has　better　properties.　Finally,　electrical　measurements　of　the　two　devices　were　carried　out　using　an　electrochemical　platform.　The　output　versus　transfer　characteristic　curves　derived　from　the　tests　confirmed　that　the　PMMA-optimized　parallel　Pentacene　thin-film　transistors　had　enhanced　mobility,　boost　significantly　lower　threshold　voltage,　and　reformed　device　performance.　©　2024　SPIE.