Indium　selenide　(InSe)　crystal,　as　an　emerging　Van　der　Waals　semiconductor,　showed　great　potential　in　optical　and　optoelectronic　devices　due　to　its　remarkable　electron　mobility,　flexible　direct　bandgap,　and　photoresponsivity.　Especially,　the　bulk　single-crystalline　InSe　shows　superplastic　deformability　with　the　aid　of　the　interlayer　gliding　and　cross-layer　dislocation　slip.　The　extraordinary　mechanical　behavior　brings　significant　opportunities　and　possibilities　to　pressure-modulated　optical　devices,　which,　however,　have　not　been　explored　sufficiently.　Additionally,　InSe　crystals　are　challenged　in　the　rapid　large-scale　preparation　and　reproduction　due　to　limitations,　such　as　phase　heterogeneity,　dissociation　risks,　and　chemical　instability.　Herein,　we　proposed　a　fiber　drawing　technique　to　create　single-crystalline　InSe　by　the　molten　core　drawing　method　combined　with　CO2　laser-induced　recrystallization.　The　fabricated　InSe　fiber,　spanning　several　meters　in　length,　shows　a　uniform　and　directional　single-crystalline　InSe　core　encased　within　a　450　mu　m　thick　protective　borosilicate　glass　cladding.　The　inherent　core-cladding　configuration　of　the　InSe　fibers　not　only　provides　robust　protection　to　the　InSe　crystals　but　also　seamlessly　creates　a　whispering-gallery-mode　microcavity.　Utilizing　a　532　nm　nanosecond　pulsed　laser　as　a　pump,　a　tunable　lasing　from　1076.2　to　1111.8　nm　was　achieved,　dictated　by　the　controlled　pressure　within　the　InSe　fiber.　We　present　a　simple　and　effective　method　for　single-crystalline　InSe　fabrication　and　first　achieve　a　pressure-modulated　laser　in　a　near-infrared　band　based　on　InSe　fiber,　heralding　an　advancement　for　the　scalable,　efficient　generation　of　tunable　lasers.　Single-crystalline　indium　selenide　fibers　by　laser-induced　recrystallization　and　their　tunable　whispering-gallery-mode　lasing　by　pressure-modulating.　image