The　existing　mechanical　dicing　process　of　single　crystalline　Silicon　Carbide　(SiC)　is　one　of　the　main　factors　limiting　the　development　of　semiconductor　process,　which　could　be　replaced　by　laser　scribing　potentially.　To　achieve　efficient　and　low-damage　SiC　separation,　the　cracking　behavior　of　SiC　after　laser　grooving　should　be　well　understood　and　controllable.　Since　the　laser　grooving　including　thermal　ablation　and　meltage　solidification,　the　cracking　behavior　of　the　scribed　SiC　would　be　different　to　the　original　single　crystal　SiC.　In　this　paper,　cohesive　zone　model　(CZM)　is　used　to　quantitively　represent　the　cracking　behavior　of　the　nano-laser　scribed　SiC.　The　separation　after　scribing　was　conducted　in　a　three-point　bending　(3　PB)　fixture　to　characterize　the　cracking　behavior.　Therefore,　by　inverting　the　load-displacement　curves　of　3　PB　with　CZM　embedded　finite　element　model,　the　cohesive　behavior　is　characterized　by　bilinear　traction-separation　law,　which　illustrated　the　whole　cracking　process　numerically.　The　methodology　established　in　current　paper　gives　way　to　understand　the　SiC　scribing　and　cracking　process　with　quantitative　cohesive　parameters.