InGaZnO　ceramic　target　was　obtained　by　solid-state　reactions　in　atmospheric　pressure.　Pulsed　laser　deposition　method　was　applied　to　growing　amorphous　InGaZnO　films　on　the　quartz　glass　at　room　temperature　under　1Pa　oxygen　pressure.　The　film　properties　were　carefully　examined　using　X-ray　diffraction　(XRD),　transmission　spectra,　Raman　spectra　and　Hall　effect　measurement.　InGaZnO　thin　films　were　amorphous　structure　and　with　high　quality.　The　transmitted　spectrum　shows　that　thin　films　exhibit　perfect　light　transmission　and　narrow　band　gap.　The　InGaZnO　film　contains　amorphous　structure,　perfect　light　transmission　and　high　carrier　mobility　at　low　deposition　temperature　with　inch-indium　content.　These　amorphous　IGZO　thin　films　with　high　mobility　and　transparency　are　highly　desirable　for　device　fabrication　on　flexible　substrates.