Two-dimensional　(2D)　InSe　and　PtTe2　have　drawn　extensive　attention　due　to　their　intriguing　properties.　However,　the　InSe　monolayer　is　an　indirect　bandgap　semiconductor　with　a　low　hole　mobility.　van　der　Waals　(vdW)　heterostructures　produce　interesting　electronic　and　optoelectronic　properties　beyond　the　existing　2D　materials　and　endow　totally　new　device　functions.　Herein,　we　theoretically　investigated　the　electronic　structures,　transport　behaviors,　and　electric　field　tuning　effects　of　the　InSe/PtTe2　vdW　heterostructures.　The　calculated　results　show　that　the　direct　bandgap　type-II　vdW　heterostructures　can　be　realized　by　regulating　the　stacking　configurations　of　heterostructures.　By　applying　an　external　electric　field,　the　band　alignment　and　bandgap　of　the　heterostructures　can　also　be　flexibly　modulated.　Particularly,　the　hole　mobility　of　the　heterostructures　is　improved　by　2　orders　of　magnitude　to　similar　to　10(3)　cm(2)　V-1　s(-1),　which　overcomes　the　intrinsic　disadvantage　of　the　InSe　monolayer.　The　InSe/PtTe2　vdW　heterostructures　have　great　potential　applications　in　developing　novel　optoelectronic　devices.