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Author:

Zhou, Wen-Long (Zhou, Wen-Long.) | Zhang, Ming (Zhang, Ming.) | Song, Xue-Mei (Song, Xue-Mei.) | Yan, Hui (Yan, Hui.)

Indexed by:

EI Scopus PKU CSCD

Abstract:

Nanocrystalline diamond (NCD) films were synthesized on the silicon substrate with diameter of 10 cm by microwave plasma enhanced chemical vapour deposition using CH4 and H2 as the reactant gas. The film composition and performance were characterized by X-ray diffractometry, Raman spectroscopy, scanning electron microscopy and atomic force microscopy, respectively. The results show that, the average grain size of the film is about 13.8 nm, the maximum thickness can reach 10.8 μm and the surface roughness is 11.8 nm. The Raman spectrum is the typical characteristic peak shape of nanocrystalline diamond films, and the field emission properties were measured under high vacuum conditions. ©, 2014, Zhongguo Youse Jinshu Xuebao/Chinese Journal of Nonferrous Metals. All right reserved.

Keyword:

X ray diffraction analysis Plasma enhanced chemical vapor deposition Surface roughness Atomic force microscopy Field emission Nanocrystalline silicon Nanocrystals Raman scattering Film preparation Scanning electron microscopy Diamond films

Author Community:

  • [ 1 ] [Zhou, Wen-Long]College of Materials Science and Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 2 ] [Zhang, Ming]College of Materials Science and Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 3 ] [Song, Xue-Mei]College of Materials Science and Engineering, Beijing University of Technology, Beijing; 100124, China
  • [ 4 ] [Yan, Hui]College of Materials Science and Engineering, Beijing University of Technology, Beijing; 100124, China

Reprint Author's Address:

  • [zhang, ming]college of materials science and engineering, beijing university of technology, beijing; 100124, china

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Source :

Chinese Journal of Nonferrous Metals

ISSN: 1004-0609

Year: 2014

Issue: 11

Volume: 24

Page: 2844-2848

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 5

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