In　order　to　solve　the　facet　catastrophic　optical　damage　(COD)　which　is　caused　by　the　facet　heating　due　to　optical　absorption　in　the　mirror　region,　the　effect　of　intermixing　on　InGaAs/AlGaAs　quantum　well　structure　using　impurity-free　vacancy　disordering　(IFVD)　technique　is　investigated.　The　SiO2　dielectric　films　are　grown　on　the　structure　of　AlGaAs/InGaAs-MQW/GaAs-buffer　layer/InGaAs　by　plasma　enhanced　chemical　vapor　deposition　(PECVD).　Then,　quantum　well　intermixing　(QWI)　is　realized　by　the　impurity-free　vacancy　diffusion　(IFVD)　technology　after　rapid　thermal　annealing　(RTA)　at　N2　atmosphere.　Through　the　experiment　we　find　that　the　magnitude　of　the　blue　shift　changes　with　the　annealing　time　and　the　thickness　of　the　dielectric　layer.　The　thicker　dielectric　layer　under　the　same　annealing　temperature　and　the　longer　annealing　time,　the　larger　blue　shift　we　get.　However,　when　the　annealing　time　is　relatively　long　in　high　annealing　temperature,　the　greater　damage　is　made　to　quantum　well　from　annealing.　Cycle-annealing　in　high　temperature　for　short　time　is　selected　to　ensure　that　quantum　wells　can　intermix　evidently　under　the　condition　of　no　obvious　damage.　46　nm　blue　shift　is　achieved　by　applying　a　cycle-annealing　at　850　in　6　min　for　5　cycles　and　the　PL　peak　keeps　more　than　80%　of　that　of　the　as-grown　sample.