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Author:

Qi, C. (Qi, C..) | Ma, Y. (Ma, Y..) | Qi, Y. (Qi, Y..) | Zhang, W. (Zhang, W..) | Shen, Q. (Shen, Q..) | Wang, B. (Wang, B..)

Indexed by:

EI Scopus SCIE

Abstract:

Tungsten (W) is considered the prime candidate for plasma-facing materials (PFMs) in future fusion devices. However, the surface blistering induced by hydrogen isotope irradiation can significantly alter the surface morphology of W, thereby severely impacting its service lifetime. Recent studies have shown that high entropy alloys (HEAs) exhibit excellent radiation resistance. This work focuses on investigating the H+ irradiation effects on low-activity W-based HEAs. A composite target was prepared using a splicing method, and WTaZrCrVTiAl HEA films with an amorphous structure were deposited by magnetron sputtering. Comparative experiments on the HEA film and pure W film under H+ irradiation conditions revealed that the blister dose threshold of the HEA film far exceeds that of the pure W film, which implies that they have more excellent resistance to H+ irradiation. © 2024 Elsevier B.V.

Keyword:

Nuclear materials Metallic composites Radiation damage

Author Community:

  • [ 1 ] [Qi C.]Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
  • [ 2 ] [Ma Y.]Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing, 100190, China
  • [ 3 ] [Qi Y.]College of Metallurgy and Energy, North China University of Science and Technology, Tangshan, 063210, China
  • [ 4 ] [Zhang W.]Department of Physics, Beihang University, Beijing, 100191, China
  • [ 5 ] [Shen Q.]Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
  • [ 6 ] [Wang B.]Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China

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Source :

Materials Letters

ISSN: 0167-577X

Year: 2024

Volume: 374

3 . 0 0 0

JCR@2022

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 10

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