Investigation of AlGaN/GaN HEMT trap barrier height variation under mechanical stress and voltage stress - Details

Author：

Zhang, Y. (Zhang, Y..) | Zhu, H. (Zhu, H..) | Liu, X. (Liu, X..) | Zhang, Z. (Zhang, Z..)

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EI Scopus

Abstract：

The　variation　of　the　trap　barrier　height　of　AlGaN/GaN　high　electron　mobility　transistor　(HEMT)　under　the　mechanical　stress　and　voltage　stress　was　investigated.　It　was　found　that　the　compressive　stress　and　small　voltage　stress　mitigated　the　slowing　down　of　the　intra-layer　strain,　and　the　decrease　of　the　gate　leakage　current　was　related　to　the　increase　of　the　trap　barrier　height.　Tensile　stress　and　large　voltage　stress　exacerbated　the　intra-layer　strain,　and　the　additional　traps　due　to　the　inverse　piezoelectric　effect　caused　an　increase　in　the　gate　leakage　current,　which　was　verified　by　the　decrease　in　the　trap　barrier　height.　©　Published　under　licence　by　IOP　Publishing　Ltd.

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[ 1 ] [Zhang Y.]Department of Electronic Information, Beijing University of Technology, Beijing, China
[ 2 ] [Zhu H.]Department of Electronic Information, Beijing University of Technology, Beijing, China
[ 3 ] [Liu X.]Department of Electronic Information, Beijing University of Technology, Beijing, China
[ 4 ] [Zhang Z.]Department of Electronic Information, Beijing University of Technology, Beijing, China

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ISSN： 1742-6588

Year： 2024

Issue： 1

Volume： 2810

Language： English

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SCOPUS Cited Count： 1

ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 3

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