The　aim　of　this　study　is　to　investigate　the　feasibility　of　using　non　precious　metal　Cu　as　a　catalyst　instead　of　precious　metal　Au　to　prepare　highly　crystalline　GaN　nanowires　on　flexible　carbon　films,　and　to　investigate　their　field　emission　characteristics　and　mechanisms.　Non　precious　metal　Cu　instead　of　precious　metal　Au　is　used　as　a　catalyst　to　prepare　a　flexible　carbon　film　with　a　diameter　of　approximate　20　-　100　nm　and　a　length　of　approximate　3　-　15　μm.　The　catalytic　growth　mechanism　of　GaN　nanowire　thin　films　was　obtained　by　adjusting　the　structure　and　size　of　high　crystalline　GaN　nanowires　with　m　and　process　parameters.　By　studying　its　field　emission　characteristics,　it　is　found　that　its　field　emission　performance　is　closely　related　to　its　nanostructure,　and　the　thickness　of　the　catalyst　and　the　bending　state　of　the　thin　film　can　significantly　affect　its　field　emission　performance.　The　field　emission　current　of　GaN　nanowire　flexible　films　prepared　using　Cu　as　a　catalyst　has　good　stability.　This　study　provides　a　reference　idea　for　low-cost　preparation　methods　of　GaN　nanowires,　and　also　provides　feasible　technical　means　for　the　production　of　field　emission　flexible　devices.　©　2024　Beijing　University　of　Technology.　All　rights　reserved.