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Author:

Meng, Haixing (Meng, Haixing.) | Li, Ying (Li, Ying.) | Wang, Ying (Wang, Ying.) | Zhu, Minqi (Zhu, Minqi.) | Xiao, Jiawen (Xiao, Jiawen.) (Scholars:肖家文) | Shen, Guozhen (Shen, Guozhen.)

Indexed by:

EI Scopus SCIE

Abstract:

Flexible scintillators with high light yield, spatial resolution and low light scattering are ideal for X-ray imaging application. However, conventional scintillators are always prepared by crystallization of functional layer, grinding and mixing with polymers, resulting in serious light scattering. Herein, an in situ fabrication strategy is proposed to prepare a low light scattering flexible scintillator film based on 0D antimony halide C38H36P2SbCl5 (MTP2SbCl5). The prepared scintillator film exhibits bright yellow emission with an outstanding photoluminescence quantum yield (PLQY) of 99.69%, and it demonstrates linear responsiveness to X-ray dose, achieving an impressive light yield of 39800 photons MeV-1 and a low detection limitation of 78.4 nGyair s-1. The scintillator film possesses strong radiation hardness and stability. In addition, low light scattering greatly inhibits optical crosstalk during X-ray detection, effectively improving the spatial resolution of MTP2SbCl5 film from 4.5 to 10.2 lp mm-1. On account of the simple preparation method and high performance, this work provides guidance for the preparation of high-efficiency, large-area, low-scattering and high-resolution flexible scintillator in the future.

Keyword:

non-planar X-ray imaging in situ fabrication strategy near-unity PLQY flexible scintillator screens antimony halide

Author Community:

  • [ 1 ] [Meng, Haixing]Beijing Inst Technol, Sch Integrated Circuits & Elect, Beijing 100081, Peoples R China
  • [ 2 ] [Li, Ying]Beijing Inst Technol, Sch Integrated Circuits & Elect, Beijing 100081, Peoples R China
  • [ 3 ] [Shen, Guozhen]Beijing Inst Technol, Sch Integrated Circuits & Elect, Beijing 100081, Peoples R China
  • [ 4 ] [Wang, Ying]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing Key Lab Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 5 ] [Xiao, Jiawen]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing Key Lab Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 6 ] [Zhu, Minqi]Soochow Univ, Inst Theoret & Appl Phys, Sch Phys Sci & Technol, Jiangsu Key Lab Thin Films, Suzhou 215006, Peoples R China

Reprint Author's Address:

  • [Li, Ying]Beijing Inst Technol, Sch Integrated Circuits & Elect, Beijing 100081, Peoples R China;;[Shen, Guozhen]Beijing Inst Technol, Sch Integrated Circuits & Elect, Beijing 100081, Peoples R China;;[Xiao, Jiawen]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing Key Lab Microstruct & Property Adv Mat, Beijing 100124, Peoples R China;;

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Source :

LASER & PHOTONICS REVIEWS

ISSN: 1863-8880

Year: 2024

Issue: 4

Volume: 19

1 1 . 0 0 0

JCR@2022

Cited Count:

WoS CC Cited Count: 2

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 6

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