Traditional　semiconductor　used　as　channel　materials　in　driving　transistors　suffer　from　significant　performance　degradation　as　the　semiconductor　thickness　is　reduced.　The　two-dimensional　(2D)　materials　with　smooth,　dangling-bond-free　surfaces,　represented　by　graphene,　can　be　alternatives.　Graphene　boasts　several　advantages,　including　structural　stability,　ultra-thin　thickness,　near-total　transparency,　exceptional　flexibility,　and　high　mobility.　Therefore,　graphene　field-effect　transistors　(GFETs)　in　the　paper　are　used　to　drive　Micro-light-emitting　diodes　(Micro-LEDs),　key　elements　in　next-generation　advanced　displays　due　to　their　high　resolution,　high　brightness,　high　contrast,　etc.　Importantly,　this　study　addresses　the　two　major　bottlenecks　i.e.　Micro-LEDs’　mass　transfer　and　graphene　transfer.　That　is,　monolithically　integrated　devices　of　Micro-LED　and　its　driver　GFET　are　designed　and　fabricated,　bypassing　the　issue　of　traditional　Micro-LEDs’　mass　transfer.　For　the　first　time,　transfer-free　method　by　plasma-enhanced　chemical　vapor　deposition　(PECVD)　is　used　to　grow　graphene　directly　on　GaN　Micro-LED　samples　and　prepared　graphene　transistors.　This　approach　avoids　doping　and　damage　to　the　graphene　during　the　transfer　process,　significantly　shortens　the　growth　time,　and　improves　the　fabrication　efficiency.　The　devices　possess　broad　applications　potential　and　compatibility　with　semiconductor　planar　processes.　This　study　paves　the　way　for　the　transfer-free　growth　of　graphene　and　the　integration　of　Micro-LEDs　with　2D　materials　transistors.　©　2024　Elsevier　Ltd