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Author:

Yang, J. (Yang, J..) | Zhang, X. (Zhang, X..) | Tang, J. (Tang, J..) | Liu, B. (Liu, B..) | Liu, X. (Liu, X..) | He, H. (He, H..) | Wang, P. (Wang, P..)

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Abstract:

Bismuth (Bi)-doped glasses and fibers have been regarded as the most promising gain medium for broadband optical amplifiers. However, the Bi-doped glasses and fibers still meet low gain and insufficient efficiency due to the volatilization, uneven distribution, and uncontrollable valence states of Bi ions in the high-temperature (~2000℃) modified chemical vapor deposition process. Herein, we modified the sol-gel method and synthesized uniform Bi-doped glass with a doping concentration of 0.5 wt.% Bi ions at 1300℃. Employing an 808 nm LD as a pump, the Bi-doped glass showed a broadband fluorescence with the emission peak at 1413 nm and a FWHM of 112 nm. On this basis, the Bi-doped fibers were fabricated by rod-in-tube method. The background loss was measured to be 0.27 dB/m at 1550 nm. A 40 m Bi-doped fiber amplifier was constructed by 808 nm backward pumping. The maximum on-off gain at 1395 nm reached 36 dB, heralding the potential of our modified sol-gel method for high-gain Bi-doped glass and fiber fabrication. © 2024 SPIE.

Keyword:

modified sol-gel method broadband fiber amplifier Bi-doped glasses and fibers

Author Community:

  • [ 1 ] [Yang J.]Institute of Laser Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 2 ] [Yang J.]Engineering Research Center of Laser Applied Technology, Beijing, 100124, China
  • [ 3 ] [Zhang X.]Institute of Laser Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 4 ] [Zhang X.]Engineering Research Center of Laser Applied Technology, Beijing, 100124, China
  • [ 5 ] [Tang J.]Institute of Laser Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 6 ] [Tang J.]Engineering Research Center of Laser Applied Technology, Beijing, 100124, China
  • [ 7 ] [Liu B.]Institute of Laser Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 8 ] [Liu B.]Engineering Research Center of Laser Applied Technology, Beijing, 100124, China
  • [ 9 ] [Liu X.]Institute of Laser Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 10 ] [Liu X.]Engineering Research Center of Laser Applied Technology, Beijing, 100124, China
  • [ 11 ] [He H.]Institute of Laser Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 12 ] [He H.]Engineering Research Center of Laser Applied Technology, Beijing, 100124, China
  • [ 13 ] [Wang P.]Institute of Laser Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 14 ] [Wang P.]Engineering Research Center of Laser Applied Technology, Beijing, 100124, China

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ISSN: 0277-786X

Year: 2024

Volume: 13287

Language: English

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 6

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