The　new　power　IGBT　module　is　widely　used　in　new　application　scenarios　such　as　high　voltage　and　high　frequency,　which　is　an　important　research　direction　of　the　development　of　information　science.　In　this　paper,　the　influence　of　uneven　temperature　between　multiple　chips　on　the　short-circuit　operation　of　IGBT　module　is　analyzed,　a　three-dimensional　model　is　established　and　analyzed　by　finite　element　method.　After　creating　the　temperature　condition　of　uneven　temperature　distribution　caused　by　the　degradation　of　some　heat　dissipation　conditions,　the　temperature　distribution　and　heat　flux　distribution　of　IGBT　module　under　this　temperature　condition　are　simulated,　This　paper　analyzes　the　influence　of　uneven　temperature　between　multiple　chips　in　IGBT　module　on　the　short-circuit　operation　of　IGBT　module,　and　puts　forward　some　reliability　suggestions　for　the　wide　application　of　IGBT　in　high-frequency　and　high-voltage　occasions.　©　2024　SPIE.