Over　the　past　decades,　metasurfaces　have　experienced　rapid　development　controlling　the　propagation　of　electromagnetic　waves.　Seamlessly　combining　metasurfaces　with　semiconductor　devices　enhance　the　device＇s　performance　and　expand　functional　diversity.　Currently,　vertical-cavity　surface-emitting　lasers　integrated　with　metasurfaces　(MS-VCSELs)　employed　to　generate　various　wavefronts.　However,　the　existing　MS-VCSELs　that　use　only　phase　modulation　still　face　limitations　and　challenges　in　generating　customized　fields,　especially　in　3D　space.　Here,　amplitude-phase　metasurfaces　are　proposed　and　joint　amplitude-phase　modulations　are　employed　to　increase　the　degree　of　freedom　in　controlling　laser　fields.　By　using　electron　beam　lithography　(EBL)　and　inductively　coupled　plasma　reaction　ion　etching　(ICP-RIE),　metasurfaces　are　directly　fabricated　on　the　back-emitting　surface　of　VCSELs,　enabling　samples　to　realize　diverse　functions　such　as　multi-focus　multi-plane　generation　and　intensity　control,　multi-plane　holographic　images,　and　laser　beam　deflections　with　different　intensities.　Compared　to　traditional　discrete　metasurface　configurations,　the　proposed　scheme　achieves　on-chip　integration　of　amplitude-phase　metasurface　with　the　light　source,　enhancing　the　multidimensional　laser　field　modulation　capabilities　of　MS-VCSELs　in　the　3D　space　while　further　promoting　the　cross-integration　of　metasurfaces　with　optoelectronic　devices.　It　is　believed　that　MS-VCSELs　with　amplitude-phase　modulations　hold　significant　promise　for　applications　in　3D　imaging,　facial　recognition,　and　laser　communications.