Because　of　its　outstanding　advantages,　sintered　nano　silver　is　considered　the　most　promising　interconnect　material　in　power　module　packaging　such　as　silicon　carbide　(SiC).　In　view　of　the　wettability　of　the　interface　between　sintered　nano　silver　and　metal　substrate,　the　influence　of　the　metallization　layer,　which　is　adopted　to　improve　the　wettability　of　the　interface　between　sintered　nanosilver　and　metal　substrate,　on　the　interface　bonding　strength　has　also　become　a　research　focus.　In　this　paper,　a　cohesive　zone　model　(CZM),　which　can　describe　the　failure　damage　and　shear　fracture　process,　is　used　to　predict　the　bonding　strength　of　＂sandwich＂structures　with　different　metallization　layers　based　on　the　die　shear　test.　Considering　the　effect　of　high　temperature　aging,　the　mechanism　of　different　substrate　metallization　and　high　temperature　aging　conditions　on　the　shear　strength　of　sintered　silver　interconnect　layer　was　presented.　Based　on　the　fracture　surface　morphology　of　sintered　silver　adhesive　joint,　the　mechanism　of　bonding　strength　of　samples　with　different　metallization　layers　changes　with　high　temperature　aging　is　verified.　In　addition,　the　CZM　model　and　related　parameters　proposed　in　this　paper　can　be　directly　used　to　evaluate　the　reliability　of　sintered　Ag-Al　interface　in　power　device　applications.　　©　2001-2011　IEEE.