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Author:

Chang, P. (Chang, P..) | Guo, Y. (Guo, Y..) | Xie, M. (Xie, M..) | Li, J. (Li, J..) | Xie, Y. (Xie, Y..) | Zeng, L. (Zeng, L..)

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Abstract:

New insights into polarization dynamics in hafnium oxide-based ferroelectrics with cylindrical shell structures are presented based on a phase-field modeling. By introducing in-plane radial electric field, a center-type quadrant domain with charged domain wall can be created, which are topologically protected owing to cylindrical geometrical confinement. More importantly, reversible switching of the four-quad domain between convergent and divergent states can be realized through the domain nucleation, growth and rotation processes, that are driven by domain wall motion, split and merge. Quantum transport calculation predicts the emergence of a domain-wall tunneling electro-resistance effect, due to the broken curvature symmetry between inner and outer boundaries. Furthermore, ferroelectric-antiferroelectric (FE-AFE) phase transition occurs with reduced radius of cylinder shell. These microscopic insights into connections between domain patterns and charge transports are helpful in designing three-dimensional ferroelectric devices.  © 1980-2012 IEEE.

Keyword:

Ferroelectric hafnium oxide cylindrical shell structure topological polarization phase-field simulation

Author Community:

  • [ 1 ] [Chang P.]Beijing University of Technology, Key Laboratory of Optoelectronics Technology of Ministry of Education, Beijing, 100124, China
  • [ 2 ] [Guo Y.]Beijing University of Technology, Key Laboratory of Optoelectronics Technology of Ministry of Education, Beijing, 100124, China
  • [ 3 ] [Xie M.]Beijing University of Technology, Key Laboratory of Optoelectronics Technology of Ministry of Education, Beijing, 100124, China
  • [ 4 ] [Li J.]Beijing University of Technology, Key Laboratory of Optoelectronics Technology of Ministry of Education, Beijing, 100124, China
  • [ 5 ] [Xie Y.]Beijing University of Technology, Key Laboratory of Optoelectronics Technology of Ministry of Education, Beijing, 100124, China
  • [ 6 ] [Zeng L.]Beihang University, Miit Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beijing, 100191, China

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Source :

IEEE Electron Device Letters

ISSN: 0741-3106

Year: 2024

Issue: 2

Volume: 46

Page: 179-182

4 . 9 0 0

JCR@2022

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 11

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