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Author:

Zheng, Si-Kang (Zheng, Si-Kang.) | Zhang, Zhen-Hua (Zhang, Zhen-Hua.) | Tao, Yan-Yan (Tao, Yan-Yan.) | Yang, Xiao-Meng (Yang, Xiao-Meng.) | Liu, Jie (Liu, Jie.) | Wang, Hong-Hui (Wang, Hong-Hui.) | Han, Guang (Han, Guang.) | Lu, Xu (Lu, Xu.) | Wang, Guo-Yu (Wang, Guo-Yu.) | Zhang, Bin (Zhang, Bin.) | Zhou, Xiao-Yuan (Zhou, Xiao-Yuan.)

Indexed by:

Scopus SCIE

Abstract:

SnS, a well-known van der Waals chalcogenide, is susceptible to oxidation in high-temperature or high-humidity environments, significantly impacting its functional performance and device stability. Conversely, oxidation can be used as an effective strategy for surface engineering, allowing for structure modulation or design, property tuning and application exploration. However, there is currently a gap in understanding the relationship between the oxidation behavior of SnS, the structure of its oxidized surface, and the dependence on oxidation temperature. In this study, we systematically investigated the evolution of SnS surfaces under thermal oxidation using electron microscopy. The microstructure evolution (e.g., surface structures, phases, defects, and interface) of SnS during high-temperature oxidation has been fully characterized and studied based on cross-sectional samples. Various surface heterostructures were constructed, including SnO2/SnS, SnO2/SnS2/SnS, and SnO2/Sn2S3/SnS, offering significant potential for the surface functionalization of SnS-based systems. Accordingly, oxidation mechanisms at different stages were elucidated based on the detailed and clear picture of microstructures. This research not only deepens our understanding of the fundamental science of SnS oxidation but also provides valuable insights for preventing and developing surface oxidation engineering in SnS and other van der Waals chalcogenides/materials. SnS (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic),(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic), (sic)(sic)(sic)SnS (sic)(sic)(sic)(sic)(sic),(sic)(sic)(sic) (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic)(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)SnS (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)((sic)(sic)(sic),(sic)(sic)(sic)(sic)(sic)(sic))(sic)(sic)(sic)(sic).(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)SnO2/SnS, SnO2/SnS2/SnS (sic)SnO2/Sn2S3/SnS (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic), (sic)SnS (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic), (sic)(sic)(sic)SnS (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)SnS (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic), (sic)(sic)(sic)SnS (sic)(sic) (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)/(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).

Keyword:

Electron microscopic investigation Formation mechanism SnS Heterogeneous surfaces Oxidation

Author Community:

  • [ 1 ] [Zheng, Si-Kang]Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China
  • [ 2 ] [Tao, Yan-Yan]Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China
  • [ 3 ] [Wang, Hong-Hui]Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China
  • [ 4 ] [Lu, Xu]Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China
  • [ 5 ] [Zhang, Bin]Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China
  • [ 6 ] [Zhou, Xiao-Yuan]Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China
  • [ 7 ] [Zheng, Si-Kang]Chongqing Univ, Ctr Quantum Mat & Devices, Chongqing 401331, Peoples R China
  • [ 8 ] [Tao, Yan-Yan]Chongqing Univ, Ctr Quantum Mat & Devices, Chongqing 401331, Peoples R China
  • [ 9 ] [Wang, Hong-Hui]Chongqing Univ, Ctr Quantum Mat & Devices, Chongqing 401331, Peoples R China
  • [ 10 ] [Lu, Xu]Chongqing Univ, Ctr Quantum Mat & Devices, Chongqing 401331, Peoples R China
  • [ 11 ] [Zhang, Bin]Chongqing Univ, Ctr Quantum Mat & Devices, Chongqing 401331, Peoples R China
  • [ 12 ] [Zhou, Xiao-Yuan]Chongqing Univ, Ctr Quantum Mat & Devices, Chongqing 401331, Peoples R China
  • [ 13 ] [Zhang, Zhen-Hua]Hangzhou Dianzi Univ, Inst Adv Magnet Mat, Coll Mat & Environm Engn, Key Lab Novel Mat Sensor Zhejiang Prov, Hangzhou 310012, Peoples R China
  • [ 14 ] [Yang, Xiao-Meng]Beijing Univ Technol, Fac Mat & Mfg, Beijing Key Lab Microstruct & Property Adv Mat, Beijing 100024, Peoples R China
  • [ 15 ] [Liu, Jie]Chongqing Univ, Analyt & Testing Ctr, Chongqing 401331, Peoples R China
  • [ 16 ] [Zhang, Bin]Chongqing Univ, Analyt & Testing Ctr, Chongqing 401331, Peoples R China
  • [ 17 ] [Zhou, Xiao-Yuan]Chongqing Univ, Analyt & Testing Ctr, Chongqing 401331, Peoples R China
  • [ 18 ] [Han, Guang]Chongqing Univ, Coll Mat Sci & Engn, Chongqing 400044, Peoples R China
  • [ 19 ] [Wang, Guo-Yu]Chongqing Univ, Coll Mat Sci & Engn, Chongqing 400044, Peoples R China

Reprint Author's Address:

  • [Wang, Hong-Hui]Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China;;[Zhang, Bin]Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China;;[Zhang, Bin]Chongqing Univ, Analyt & Testing Ctr, Chongqing 401331, Peoples R China

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RARE METALS

ISSN: 1001-0521

Year: 2025

8 . 8 0 0

JCR@2022

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 13

Affiliated Colleges:

Online/Total:436/10586475
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