High-performance　transparent　conductive　oxides　(TCOs)　with　low　electrical　resistivity　and　high　transparency　are　highly　desirable　for　silicon　heterojunction　(SHJ)　solar　cells.　Herein,　high-quality　cerium　(Ce)　and　hydrogen　codoped　indium　oxide　(ICO:H)　is　prepared　by　reactive　plasma　deposition　(RPD)　and　verified　on　SHJ　solar　cells.　The　effects　of　CeO2　doping　ratio,　H2/Ar　ratio,　and　annealing　treatment　on　the　optoelectronic　properties　of　ICO:H　were　investigated　and　optimized.　We　obtain　high-performance　ICO:H　films　with　simultaneous　state-of-the-art　mobility　of　169.2　cm2/(V　s),　low　carrier　concentration　of　1.9　x　1020　cm-3,　and　high　transparency.　As　a　result,　a　certified　power　conversion　efficiency　(PCE)　of　26.6%　is　achieved　for　SHJ　solar　cells　with　ICO:H,　featuring　less　dependency　on　the　underlying　hydrogenated　nanocrystalline　silicon　oxide　(nc-SiO　x　:H)　layer.　The　implementation　of　ICO:H　in　an　industrial　production　line　demonstrates　a　higher　PCE　and　better　yield.