Passively Q-switched Nd:YAG microchip laser based on graphene - Details

Author：

Cao, Yi (Cao, Yi.) | Liu, Jia (Liu, Jia.) | Liu, Jiang (Liu, Jiang.) | Wang, Pu (Wang, Pu.) (Scholars：王璞)

Indexed by：

EI Scopus PKU CSCD

Abstract：

A　design　passively　Q-switched　Nd:YAG　microchip　laser　based　on　graphene　saturable　absorber　is　presented.　A　thin　layer　of　graphene　is　sandwiched　between　the　Nd:YAG　crystal　and　YAG　crystal　closely,　and　dichroic　coatings　on　crystals　is　used　as　reflective　mirrors　for　the　plane　parallel　resonator.　The　Nd:YAG　crystal　is　end　pumped　by　a　fiber-coupled　laser　diode　via　a　lens　imaging　system.　Employing　graphene　as　saturable　absorber,　Q-switched　Nd:YAG　microchip　laser　is　realized　at　the　pump　power　threshold　of　1.17　W　with　laser　central　wavelength　of　1064.6　nm.　The　minimum　pulse　duration　is　75　ns　at　488　kHz　and　the　repetition　rate　is　tunable　from　300　to　807　kHz　with　the　increase　of　the　pump　power.　The　maximum　output　power　and　highest　pulse　energy　of　the　laser　measured　are　38.4　mW　and　54.7　nJ,　respectively.

Keyword：

Graphene Optical pumping Yttrium aluminum garnet Microprocessor chips Lasers Neodymium lasers Q switching Pulse repetition rate Saturable absorbers

Author Community：

[ 1 ] [Cao, Yi]Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Liu, Jia]Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Liu, Jiang]Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Wang, Pu]Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China