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Author:

Qin, Fei (Qin, Fei.) (Scholars:秦飞) | An, Tong (An, Tong.) | Xia, Guofeng (Xia, Guofeng.)

Indexed by:

EI Scopus PKU CSCD

Abstract:

Intermetallic compound (IMC) layers formed during soldering processes significantly affect the reliability of solder joints. The atomic diffusion effect during reflow and isothermal aging leads to growth and morphological evolution of IMC layers, and stress is developed in the IMC layers. The changed microstructure and the stress in the IMC layer result in degradation of mechanical performance of solder joints. Based on the mechanism of atomic diffusion-reaction, the diffusion-induced stress during the growth of the IMC layer is investigated. An analytic model with two interfaces (Cu/Cu6Sn5/Solder) at the early stages of IMC formation is proposed, and then the copper concentration distribution in the IMC layer is calculated using the Laplace transformation method. Diffusion-induced stresses are obtained analytically by transforming atomic diffusion effects into bulk strain. The results show that the diffusion-induced stress is compressive, and it reaches its peak at the Cu/Cu6Sn5 interface. The diffusion-induced stress increases with the increase of the isothermal aging time, and finally becomes stable and changes linearly along the thickness of the IMC layer.

Keyword:

Soldering Laplace transforms Atoms Isotherms Stresses Diffusion in solids Intermetallics

Author Community:

  • [ 1 ] [Qin, Fei]College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing, 100124, China
  • [ 2 ] [An, Tong]College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing, 100124, China
  • [ 3 ] [Xia, Guofeng]College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing, 100124, China

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Source :

Acta Mechanica Solida Sinica

ISSN: 0254-7805

Year: 2012

Issue: 2

Volume: 33

Page: 162-167

2 . 2 0 0

JCR@2022

ESI Discipline: ENGINEERING;

JCR Journal Grade:2

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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