Epitaxy and characteristics of resonant cavity LEDs at 650 nm - Details

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Abstract：

Resonant-cavity　light-emitting　diodes　(RCLED)　at　650　nm　wavelength　were　grown　by　metal　organic　chemical　vapor　deposition.　In　order　to　improve　the　interface　quality　and　reduce　the　device　voltage,　an　AlGaInP　material　system　has　been　chosen　to　grow　the　top　DBRs.　The　emission　properties　of　the　RCLED　were　characterized　by　measuring　PL　and　EL　spectra.　The　average　emission　power　of　the　device　is　0.5　mW　at　20　mA　and　2.2　V,　and　its　spectrum　full　width　at　half　maximum　is　about　10　nm.　©　2009　Chinese　Institute　of　Electronics.

Keyword：

Interfaces (materials) Cavity resonators Light emitting diodes Organometallics Metallorganic chemical vapor deposition Organic chemicals

Author Community：

[ 1 ] [Kang, Yuzhu]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Li, Jianjun]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Ding, Liang]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Yang, Zhen]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Han, Jun]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 6 ] [Deng, Jun]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 7 ] [Zou, Deshu]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 8 ] [Shen, Guangdi]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China