A　optimized　process　consisting　of　two-step　selective　etching　is　proposed　to　solve　the　problem　that　the　selectivity　between　TiN/Ti　and　TiSi2　is　poor　with　the　conventional　RCA1　(NH4OH:H2O2:H2O)　solution　and　results　in　a　loss　of　a　substantial　part　of　the　formed　silicide　thickness　and　hence　in　an　increase　of　the　contact　resistance.　Compared　to　the　traditional　process,　this　process　allows　an　important　reduction　of　the　TiSi2　thickness　loss　and　hence,　makes　the　reduction　of　the　sheet　resistance　about　18%.　Furthermore,　this　process　is　feasible　and　controllable,　which　makes　it　adapt　to　manufacture　in　industry.