Inductively　coupled　plasma　(ICP)　etching　rate　and　selectivity　for　GaP　are　deeply　investigated　as　a　function　of　chamber　pressure,　RF　power,　and　ICP　source　power.　Meanwhile,　the　etched　profile　and　the　surface　morphology　are　studied　in　the　process　of　the　current-blocking　layer　fabrication　and　surface-roughened　fabrication.　Finally　the　optimized　processing　parameters　are　obtained,　that　is,　the　BCl3　flow　rate　is　3/1,　the　ICP　power　is　600　W,　the　RF　power　is　100　W,　the　chamber　pressure　is　1.0　×　10-2　Pa.　In　the　process　of　surface-roughened,　only　BCl3　gas　is　used　to　improve　the　red　LED＇s　light　intensity　by　30%.