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Author:

Feng, Shi-Wei (Feng, Shi-Wei.) (Scholars:冯士维) | Zhang, Yue-Zong (Zhang, Yue-Zong.) | Meng, Hai-Jie (Meng, Hai-Jie.) | Guo, Chun-Sheng (Guo, Chun-Sheng.) | Zhang, Guang-Chen (Zhang, Guang-Chen.) | Lü, Chang-Zhi (Lü, Chang-Zhi.)

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EI Scopus PKU CSCD

Abstract:

Ohmic contact is evaluated under the high-current density, the traditional Transmission Line Method (TLM) structure is innovated, which only age the contacts areas not others. The new method can ensure the reliability and validity when the structure is applied high-current density. According to two times or more SiO2 deposition, it reduces effectively the probability of leading wire fracture. The results show after high-current density: the contact resistivity is rapidly failure early period and degenerates dramatically with time and current density. From the spectrum, Al is a kind of low electromigration resistance metal, the good ohmic contacts are destroyed due to electromigration and the Al is moved off the contact layers. The experiment proved that it is a perfect method after improving to measure the ohmic contact under the high-current density.

Keyword:

Silica Electromigration Current density Aluminum Electric contactors Electron emission Ohmic contacts

Author Community:

  • [ 1 ] [Feng, Shi-Wei]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 2 ] [Zhang, Yue-Zong]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 3 ] [Meng, Hai-Jie]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 4 ] [Guo, Chun-Sheng]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 5 ] [Zhang, Guang-Chen]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 6 ] [Lü, Chang-Zhi]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China

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Source :

Journal of Beijing University of Technology

ISSN: 0254-0037

Year: 2008

Issue: 12

Volume: 34

Page: 1254-1257

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 10

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