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Abstract：
The electrical properties of InGaN:Mg films grown by MOCVD with various growth temperature and Mg-doping concentration were investigated. The hole concentration increases with the In mole fraction. In spite of the continuous increase of Mg incorporation, the hole concentration of the film increases at first and then decreases from a certain amount of Mg incorporation. The high quality InGaN:Mg film with maximum hole concentration value of 2.4 × 1019 cm-3 was obtained by optimizing these two growth conditions. The high hole concentration InGaN:Mg films are important to further improvements in device performance.
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Research and Progress of Solid State Electronics
ISSN： 1000-3819
Year： 2008
Issue： 1
Volume： 28
Page： 4-7
Cited Count：
WoS CC Cited Count： 0
SCOPUS Cited Count：
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 7
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