Recent　years,　La2Zr2O7(LZO)　used　as　a　buffer　layer　in　coated　conductors　is　paid　more　and　more　attention　due　to　its　unique　physical　and　chemical　properties　worldwide.　This　article　presents　the　result　of　the　LZO　buffer　layer　deposited　on　the　cubic　textured　Ni-5at%W　substrate　by　chemical　solution　deposition　(CSD).　The　precursor　solution　was　prepared　by　using　the　acetylacetone　lanthanum　and　the　acetylacetone　zirconium　as　precursor　salts,　and　the　propionic　acid　as　a　solvent.　The　characteristic　of　the　precursor　solution　and　the　influence　of　the　annealing　temperature　on　forming　the　phase　and　the　orientation　of　LZO　buffer　film　were　investigated　by　analyzing　the　data　of　FT-IR　spectra　of　the　LZO　solution,　the　data　of　the　XRD　pattens　and　the　SEM　images　of　the　films,　respectively.　It　was　found　that　the　cubic　texture　in　the　LZO　buffer　layer　was　obtained　when　annealing　at　1050°C.　The　values　of　full　width　at　half　maximum　(FWHM)　of　(222)　Phi　scan　is　8.95°,　(400)　Chi　scan　being　6.8°,　respectively,　which　implies　the　sharpness　of　the　texture　in　the　as　obtained　buffer　films.　The　SEM　pictures　observed　by　high　resolution　electron　microscope　show　that　the　surface　of　the　LZO　buffer　layer　is　smooth,　dense　and　homogenous　with　free-crack　and　free-hole.