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Abstract:
A ZnO photoconductive UV detector is fabricated on ZnO film grown by MOCVD based on Al/Au interdigital electrode. Nonalloyed Al/Au metallization scheme forms good ohmic contact on n-type ZnO. The dark and photoilluminated currents increase linearly with bias voltage. The cutoff wavelength of the detector is 368 nm, and it is also in response to the blue and green light. XPS analysis shows that there are oxygen vacancy and zinc interstitial in the ZnO film, and the nonstoichiometric ZnO film has influence on the photoresponse time of the detector.
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Journal of Beijing University of Technology
ISSN: 0254-0037
Year: 2007
Issue: 7
Volume: 33
Page: 678-681
Cited Count:
WoS CC Cited Count: 0
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 8
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